Cite
Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read.
MLA
Trinh, Quang Kien, et al. “Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read.” IEEE Transactions on Circuits & Systems. Part I: Regular Papers, vol. 63, no. 10, Oct. 2016, pp. 1652–60. EBSCOhost, https://doi.org/10.1109/TCSI.2016.2582203.
APA
Trinh, Q. K., Ruocco, S., & Alioto, M. (2016). Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read. IEEE Transactions on Circuits & Systems. Part I: Regular Papers, 63(10), 1652–1660. https://doi.org/10.1109/TCSI.2016.2582203
Chicago
Trinh, Quang Kien, Sergio Ruocco, and Massimo Alioto. 2016. “Novel Boosted-Voltage Sensing Scheme for Variation-Resilient STT-MRAM Read.” IEEE Transactions on Circuits & Systems. Part I: Regular Papers 63 (10): 1652–60. doi:10.1109/TCSI.2016.2582203.