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Electrical and mechanical characteristics of fully transparent IZO thin-film transistors on stress-relieving bendable substrates.
- Source :
-
Applied Physics Letters . 10/3/2016, Vol. 109 Issue 14, p1-4. 4p. 1 Diagram, 3 Graphs. - Publication Year :
- 2016
-
Abstract
- In this study, we report the electrical and mechanical characteristics of fully transparent indium zinc oxide (IZO) thin-film transistors (TFTs) fabricated on stress-relieving bendable substrates. An IZO TFT on a stress-relieving substrate can operate normally at a bending radius of 6mm, while an IZO TFT on a normal plastic substrate fails to operate normally at a bending radius of 15mm. A plastic island with high Young's modulus embedded on a soft elastomer layer with low Young's modulus plays the role of a stress-relieving substrate for the operation of the bent IZO TFT. The stress and strain distributions over the IZO TFT will be analyzed in detail in this paper. [ABSTRACT FROM AUTHOR]
- Subjects :
- *TRANSISTORS
*ZINC oxide films
*YOUNG'S modulus
*INDIUM
*ELASTOMERS
Subjects
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 109
- Issue :
- 14
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 118683571
- Full Text :
- https://doi.org/10.1063/1.4964133