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Characterization of an n-Type 4-kV GTO for Pulsed Power Applications.
- Source :
-
IEEE Transactions on Plasma Science . Oct2016 Part 1, Vol. 44 Issue 10, Part 1, p1947-1955. 9p. - Publication Year :
- 2016
-
Abstract
- This paper details the experimental evaluation and simulation of a 4-kV n-type gate turn-OFF thyristor (GTO) designed for pulsed power applications. The primary criteria of evaluation are rate of current rise ( dI/dt ), turn-ON delay time ( T_{D}) , and resistance of the device during turn-ON transients [ R_{\mathrm{\scriptscriptstyle ON}}(t)$ ]. The device under test (DuT) is an n-type asymmetric-blocking GTO manufactured by Silicon Power (Part No. 14N40A10) with a rated dc blocking voltage of 4 kV. A test circuit was specifically designed to minimize stray inductance in order to capitalize on the dI/dt$ capabilities of the DuT. Experimental data collected from resistance measurements are used to develop a single-switch approximate model for use in simulation. The results of dI/dt$ experiments provide a profile of DuT dI/dt$ operation beyond rated values; specifically dI/dt were readily achieved. The turn-ON delay time of the DuT is also characterized and determined to be $\sim 225$ ns on average. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00933813
- Volume :
- 44
- Issue :
- 10, Part 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Plasma Science
- Publication Type :
- Academic Journal
- Accession number :
- 118689538
- Full Text :
- https://doi.org/10.1109/TPS.2016.2563161