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Picosecond Electric-Field-Induced Threshold Switching in Phase-Change Materials.
- Source :
-
Physical Review Letters . 8/5/2016, Vol. 117 Issue 6, p1-1. 1p. - Publication Year :
- 2016
-
Abstract
- Many chalcogenide glasses undergo a breakdown in electronic resistance above a critical field strength. Known as threshold switching, this mechanism enables field-induced crystallization in emerging phase-change memory. Purely electronic as well as crystal nucleation assisted models have been employed to explain the electronic breakdown. Here, picosecond electric pulses are used to excite amorphous Ag4In3Sb67Te26. Field-dependent reversible changes in conductivity and pulse-driven crystallization are observed. The present results show that threshold switching can take place within the electric pulse on subpicosecond time scales--faster than crystals can nucleate. This supports purely electronic models of threshold switching and reveals potential applications as an ultrafast electronic switch. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHASE change materials
*PICOSECOND pulses
*CHALCOGENIDE glass
Subjects
Details
- Language :
- English
- ISSN :
- 00319007
- Volume :
- 117
- Issue :
- 6
- Database :
- Academic Search Index
- Journal :
- Physical Review Letters
- Publication Type :
- Academic Journal
- Accession number :
- 118978315
- Full Text :
- https://doi.org/10.1103/PhysRevLett.117.067601