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Calibration of the Effective Tunneling Bandgap in GaAsSb/InGaAs for Improved TFET Performance Prediction.
- Source :
-
IEEE Transactions on Electron Devices . Nov2016, Vol. 63 Issue 11, p4248-4254. 7p. - Publication Year :
- 2016
-
Abstract
- The effective bandgap for heterojunction band-to-band tunneling ( $ {{E}}_{{\text {g,eff}}}$ ) is a crucial design parameter for a heterojunction tunneling FET (TFET). However, there is significant uncertainty on $ {{E}}_{{\text {g,eff}}}$ , especially for In0.53Ga0.47As/ GaAs0.5Sb0.5. This makes the prediction of TFET performance difficult. We calibrate $ {{E}}_{{\text {g,eff}}}$ by fabricating heterojunction p+/i/n+ diodes, comparing the simulated and the measured current–voltage and capacitance–voltage curves, while taking $ {{E}}_{{\text {g,eff}}}$ as a fitting parameter. Our calibration significantly reduces the uncertainty on $ {{E}}_{{\text {g,eff}}}$ compared with the range found in the literature. The comparison with the previous work on highly doped heterojunction diodes suggests that dopant-dependent bandgap narrowing reduces $ {{E}}_{{\text {g,eff}}}$ and therefore significantly impacts the performance of highly doped TFET. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 11
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 119032708
- Full Text :
- https://doi.org/10.1109/TED.2016.2604860