Cite
Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory.
MLA
Wang, Zhongqiang, et al. “Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory.” IEEE Transactions on Electron Devices, vol. 63, no. 11, Nov. 2016, pp. 4279–87. EBSCOhost, https://doi.org/10.1109/TED.2016.2604370.
APA
Wang, Z., Ambrogio, S., Balatti, S., Sills, S., Calderoni, A., Ramaswamy, N., & Ielmini, D. (2016). Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory. IEEE Transactions on Electron Devices, 63(11), 4279–4287. https://doi.org/10.1109/TED.2016.2604370
Chicago
Wang, Zhongqiang, Stefano Ambrogio, Simone Balatti, Scott Sills, Alessandro Calderoni, Nirmal Ramaswamy, and Daniele Ielmini. 2016. “Postcycling Degradation in Metal-Oxide Bipolar Resistive Switching Memory.” IEEE Transactions on Electron Devices 63 (11): 4279–87. doi:10.1109/TED.2016.2604370.