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Coalescence of planar GaAs nanowires into strain-free three-dimensional crystals on exact (001) silicon.
- Source :
-
Journal of Crystal Growth . Nov2016, Vol. 454, p19-24. 6p. - Publication Year :
- 2016
-
Abstract
- We report three dimensional (3D) disk-shaped GaAs crystals on V-groove patterned (001) Si substrates by metalorganic chemical vapor deposition. Planar GaAs nanowires with triangular cross-sections were grown inside Si V-grooves by nano-scale selective heteroepitaxy. These nanowires were then partially confined in micro-sized SiO 2 cavities and coalesced into uniform arrays of 3D crystals. Scanning electron microscope and atomic force microscopy inspection showed the absence of antiphase-domains and smooth top surface morphology. Superior structural and optical properties over GaAs thin films on planar Si were also demonstrated. More remarkably, by growing the 3D crystals on V-grooved Si, we were able to overcome the residual tensile stress induced by the thermal mismatch between GaAs and Si. Strain-free GaAs was uncovered in the crystals with a dimension of 3×3 µm 2 . [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 454
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 119157912
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2016.08.051