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Epitaxial growth of BaHfO buffer layer and its structure degeneration analysed by Raman spectrum.
- Source :
-
SpringerPlus . 11/3/2016, Vol. 5 Issue 1, p1-5. 5p. - Publication Year :
- 2016
-
Abstract
- BaHfO (BHO) has been proposed as a new cap layer material for YBaCuO (YBCO) coated conductors. Highly c-axis oriented BHO cap layer has been deposited on ion-beam assisted deposition-MgO buffered Hastelloy tapes by direct-current-magnetron sputtering method. The epi-growth of BHO films combined with its properties is investigated in details. The degenerated cubic crystal structure of BHO film is confirmed by Raman spectrum analysis. XRD θ-2θ scan, φ-scan and ω-scan reveal an excellent c-axis alignment with good in-plane and out-of-plane textures for BHO cap layers. SEM and AFM investigations show BHO cap layer a dense and crack-free morphology. Subsequently pure c-axis orientation YBCO film was epitaxial grown on such BHO cap layer successfully, shown BaHfO a potential cap layer material for coated conductors. [ABSTRACT FROM AUTHOR]
- Subjects :
- *EPITAXY
*BARIUM compounds
*RAMAN spectra
*X-ray diffraction
*CRYSTAL structure
Subjects
Details
- Language :
- English
- ISSN :
- 21931801
- Volume :
- 5
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- SpringerPlus
- Publication Type :
- Academic Journal
- Accession number :
- 119232478
- Full Text :
- https://doi.org/10.1186/s40064-016-3563-9