Cite
Significant Exciton Brightening in Monolayer Tungsten Disulfides via Fluorination: n-Type Gas Sensing Semiconductors.
MLA
Jhon, Young In, et al. “Significant Exciton Brightening in Monolayer Tungsten Disulfides via Fluorination: N-Type Gas Sensing Semiconductors.” Advanced Functional Materials, vol. 26, no. 42, Nov. 2016, pp. 7551–59. EBSCOhost, https://doi.org/10.1002/adfm.201602647.
APA
Jhon, Y. I., Kim, Y., Park, J., Kim, J. H., Lee, T., Seo, M., & Jhon, Y. M. (2016). Significant Exciton Brightening in Monolayer Tungsten Disulfides via Fluorination: n-Type Gas Sensing Semiconductors. Advanced Functional Materials, 26(42), 7551–7559. https://doi.org/10.1002/adfm.201602647
Chicago
Jhon, Young In, Younghee Kim, June Park, Jae Hun Kim, Taikjin Lee, Minah Seo, and Young Min Jhon. 2016. “Significant Exciton Brightening in Monolayer Tungsten Disulfides via Fluorination: N-Type Gas Sensing Semiconductors.” Advanced Functional Materials 26 (42): 7551–59. doi:10.1002/adfm.201602647.