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Drain Current Response to Fast Illumination Pulse for Amorphous In–Ga–Zn-O Thin-Film Transistors.
- Source :
-
IEEE Transactions on Electron Devices . Dec2016, Vol. 63 Issue 12, p4782-4787. 6p. - Publication Year :
- 2016
-
Abstract
- In this paper, the characteristic of the amorphous indium–gallium–zinc-oxide thin-film transistors under steady bias and fast multiple-pulse illumination stress is analyzed. The change in the drain current ( \Delta ID ) with respect to time is measured under different light intensities and pulse frequencies. The mechanism is proposed to explain the results by correlating the oxygen vacancy ( VO ) reacting with the light-induced electron–hole (e-h) pairs. The results can be well analyzed by the fitting formula and parameters for the different light pulse frequencies. The tendency proves that not all the VO react with e-h pairs at the same reaction rate. It is observed for the first time the number of VO with fast reaction decreases with the pulse frequency. A model is proposed to describe the relation between the number and reaction rate of VO . [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 63
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 119770816
- Full Text :
- https://doi.org/10.1109/TED.2016.2615883