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Proton conducting sodium-alginate-gated oxide thin-film transistors with varying device structure.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Dec2016, Vol. 213 Issue 12, p3103-3109. 7p. - Publication Year :
- 2016
-
Abstract
- The solution-processed sodium-alginate (SA) films, with nanoporous/nanochannel microstructure, possess a total absorbed water number of 10420 ± 395 molecules per square nanometer, which gives rise to a high proton conductivity of 4.0 × 10−4 S cm−1. When SA films used as gate dielectric in the thin film transistors, electric-double-layer (EDL) would be formed whether at the dielectric/channel or at dielectric/gate electrode interface, leading to a huge specific capacitance and low operating voltage for the TFTs. More importantly, due to the three-dimensional proton conducting characteristic, one can design the TFT device structure expediently from conventional vertical gate coupling to laterally coplanar gate coupling structure. The TFTs with ease-design device layout have potential applications in multifunctional electronic devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 213
- Issue :
- 12
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 119974764
- Full Text :
- https://doi.org/10.1002/pssa.201600214