Growth and characterization of β-Ga2O3 crystals.

Here we report on the growth and characterization of β-Ga 2 O 3 bulk crystals and polycrystalline layer on different substrates. Bulk β-Ga 2 O 3 crystals were produced by free crystallisation of gallium oxide melt in sapphire crucible. Transparent single crystals measuring up to 8 mm across were obtained. Good structural quality was confirmed by x-ray diffraction rocking curve FWHM values of ~46″. Young’s modulus, shear modulus and hardness of the β-Ga 2 O 3 crystals were measured by nanoindentation and Vickers microindentation techniques. Polycrystalline β-Ga 2 O 3 films were deposited on silicon and sapphire substrates by sublimation method. It was found that structure and morphology of the films were greatly influenced by the material and orientation of the substrates. The best results were achieved on a -plane sapphire substrates where predominantly (111) oriented films were obtained. [ABSTRACT FROM AUTHOR]