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Spin transport in nanoscale Si-based spin-valve devices.
- Source :
-
Applied Physics Letters . 12/5/2016, Vol. 109 Issue 23, p1-5. 5p. 4 Graphs. - Publication Year :
- 2016
-
Abstract
- We investigated the spin transport in nano-scale silicon (Si)-based spin-valve devices with Fe electrodes, MgO/Ge tunnel barriers, and a 20 nm-long Si channel. We observed a clear spin-valve effect when a magnetic field was applied in the film plane along and perpendicular to the Si channel transport direction. Systematic investigations of the bias voltage dependence, temperature dependence, and magnetic-field direction dependence of the magnetoresistance indicate that the observed spin-valve effect is governed by the spin transport through the nano-scale Si channel. The spinvalve effect remains observable up to 200 K. For the device with MgO/Ge tunnel barriers, with a bias voltage of 1.7V at 50K, the spin-dependent output voltage is 13 mV, which is among the highest values reported so far. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 109
- Issue :
- 23
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 120125499
- Full Text :
- https://doi.org/10.1063/1.4971351