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Influence of edge-grown HVPE GaN on the structural quality of c-plane oriented HVPE-GaN grown on ammonothermal GaN substrates.
- Source :
-
Journal of Crystal Growth . Dec2016, Vol. 456, p80-85. 6p. - Publication Year :
- 2016
-
Abstract
- Study on the sources of stress in HVPE-GaN layer crystallized on 1-in. ammonothermally grown GaN seed is presented in this paper. Characterization by means of X-ray diffraction and transmission electron microscopy is performed. HVPE-GaN samples of high quality and those with visible quality deterioration are investigated on c-plane and m-plane cross-sections. Special attention is paid to HVPE material growing in semi-polar and non-polar directions on the edges of the seed and the growing layer. It is shown that this material generates significant stress leading to a structural deterioration of HVPE-GaN growing in the c -direction. [ABSTRACT FROM AUTHOR]
- Subjects :
- *CATHODE rays
*ELECTRON microscopy
*FLUOROSCOPY
*IONIZING radiation
*X-rays
Subjects
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 456
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 120142484
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2016.07.043