Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69].

MLA

Wang, Weiliang, et al. “Corrigendum to ‘A Subgap Density of States Modeling for the Transient Characteristics in Oxide-Based Thin-Film Transistors’ [Microelectron. Reliab. 60 (2016) 67–69].” Microelectronics Reliability, vol. 67, Dec. 2016, p. 159. EBSCOhost, https://doi.org/10.1016/j.microrel.2016.09.003.

APA

Wang, W., Khan, K., Zhang, X., Qin, H., Jiang, J., Miao, L., Jiang, K., Wang, P., Dai, M., & Chu, J. (2016). Corrigendum to “A subgap density of states modeling for the transient characteristics in oxide-based thin-film transistors” [Microelectron. Reliab. 60 (2016) 67–69]. Microelectronics Reliability, 67, 159. https://doi.org/10.1016/j.microrel.2016.09.003

Chicago

Wang, Weiliang, Karim Khan, Xingye Zhang, Haiming Qin, Jun Jiang, Lijing Miao, Kemin Jiang, Pengjun Wang, Mingzhi Dai, and Junhao Chu. 2016. “Corrigendum to ‘A Subgap Density of States Modeling for the Transient Characteristics in Oxide-Based Thin-Film Transistors’ [Microelectron. Reliab. 60 (2016) 67–69].” Microelectronics Reliability 67 (December): 159. doi:10.1016/j.microrel.2016.09.003.