Reduced 1/f noise in p-Si[sub 0.3]Ge[sub 0.7] metamorphic metal–oxide–semiconductor field-effect transistor.

MLA

Myronov, M., et al. “Reduced 1/f Noise in p-Si[Sub 0.3]Ge[Sub 0.7] Metamorphic Metal–oxide–semiconductor Field-Effect Transistor.” Applied Physics Letters, vol. 84, no. 4, Jan. 2004, pp. 610–12. EBSCOhost, https://doi.org/10.1063/1.1643532.

APA

Myronov, M., O. A. Mironov, M., S. Durov, M., T. E. Whall, M., E. H. C. Parker, T. Hackbarth, M., G. Höck, M., H.-J. Herzog, M., & U. König, M. (2004). Reduced 1/f noise in p-Si[sub 0.3]Ge[sub 0.7] metamorphic metal–oxide–semiconductor field-effect transistor. Applied Physics Letters, 84(4), 610–612. https://doi.org/10.1063/1.1643532

Chicago

Myronov, M., M. O. A. Mironov, M. S. Durov, M. T. E. Whall, E. H. C. Parker, M. T. Hackbarth, M. G. Höck, M. H.-J. Herzog, and M. U. König. 2004. “Reduced 1/f Noise in p-Si[Sub 0.3]Ge[Sub 0.7] Metamorphic Metal–oxide–semiconductor Field-Effect Transistor.” Applied Physics Letters 84 (4): 610–12. doi:10.1063/1.1643532.