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Band structure and optical constants of GaAs1-xNx.
- Source :
-
Optik - International Journal for Light & Electron Optics . Feb2017, Vol. 131, p317-322. 6p. - Publication Year :
- 2017
-
Abstract
- The composition dependence of direct and indirect band gap energies, anti-symmetric gap, valence band width, refractive index and high-frequency and static dielectric constants has been investigated for GaAs 1-x N x ternary semiconductor alloys with the zinc-blende crystal structure over the whole nitrogen concentration range (x from 0 to 1). The calculations are mainly based on the pseudopotential approach within the virtual crystal approximation. The variation of band-gaps versus nitrogen content show important bowing parameters. Trends in ionicity have been discussed in terms of the anti-symmetric gap. The alloy concentration dependence of the optical parameters of interest is found to be highly nonlinear. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00304026
- Volume :
- 131
- Database :
- Academic Search Index
- Journal :
- Optik - International Journal for Light & Electron Optics
- Publication Type :
- Academic Journal
- Accession number :
- 120448595
- Full Text :
- https://doi.org/10.1016/j.ijleo.2016.11.090