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Solution Processed Amorphous ZnSnO Thin-Film Phototransistors.
- Source :
-
IEEE Transactions on Electron Devices . Jan2017, Vol. 64 Issue 1, p206-210. 5p. - Publication Year :
- 2017
-
Abstract
- Amorphous ZnSnO ( a -ZnSnO) thin films were synthesized by a combustion solution method to fabricate thin-film phototransistors. The a -ZnSnO phototransistors are extremely sensitive to UV light, with evident photoelectric effect identified at various gate voltages. The UV sensitivity is rather high ( \sim 10^5 for the ratio of photocurrent to dark-current) at the off-state, while it is quite low ( \sim 10^1 ) at the on-state. The device behaviors can completely recover to the original state within 2000 s after switching off the UV light at both on- and off-states. We demonstrate that the UV behaviors of $a$ -ZnSnO phototransistors can be well controlled by gate voltages. This paper is expected to provide a fundamental knowledge of performances of amorphous oxide phototransistors for practical applications. [ABSTRACT FROM PUBLISHER]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 1
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 120459030
- Full Text :
- https://doi.org/10.1109/TED.2016.2632742