Solution Processed Amorphous ZnSnO Thin-Film Phototransistors.

Amorphous ZnSnO ( a -ZnSnO) thin films were synthesized by a combustion solution method to fabricate thin-film phototransistors. The a -ZnSnO phototransistors are extremely sensitive to UV light, with evident photoelectric effect identified at various gate voltages. The UV sensitivity is rather high ( \sim 10^5 for the ratio of photocurrent to dark-current) at the off-state, while it is quite low ( \sim 10^1 ) at the on-state. The device behaviors can completely recover to the original state within 2000 s after switching off the UV light at both on- and off-states. We demonstrate that the UV behaviors of $a$ -ZnSnO phototransistors can be well controlled by gate voltages. This paper is expected to provide a fundamental knowledge of performances of amorphous oxide phototransistors for practical applications. [ABSTRACT FROM PUBLISHER]