Cite
Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs.
MLA
Raghunathan, Uppili S., et al. “Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-N+p-n-p) SiGe HBTs.” IEEE Transactions on Electron Devices, vol. 64, no. 1, Jan. 2017, pp. 37–44. EBSCOhost, https://doi.org/10.1109/TED.2016.2631982.
APA
Raghunathan, U. S., Ying, H., Wier, B. R., Omprakash, A. P., Chakraborty, P. S., Bantu, T. G., Yasuda, H., Menz, P., & Cressler, J. D. (2017). Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-n+p-n-p) SiGe HBTs. IEEE Transactions on Electron Devices, 64(1), 37–44. https://doi.org/10.1109/TED.2016.2631982
Chicago
Raghunathan, Uppili S., Hanbin Ying, Brian R. Wier, Anup P. Omprakash, Partha S. Chakraborty, Tikurete G. Bantu, Hiroshi Yasuda, Philip Menz, and John D. Cressler. 2017. “Physical Differences in Hot Carrier Degradation of Oxide Interfaces in Complementary (n-p-N+p-n-p) SiGe HBTs.” IEEE Transactions on Electron Devices 64 (1): 37–44. doi:10.1109/TED.2016.2631982.