Back to Search
Start Over
Steep switching characteristics of single-gated feedback field-effect transistors.
- Source :
-
Nanotechnology . 2/3/2017, Vol. 28 Issue 5, p1-1. 1p. - Publication Year :
- 2017
-
Abstract
- In this study, we propose newly designed feedback field-effect transistors that utilize the positive feedback of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I–V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed feedback field-effect transistors exhibit subthreshold swings of less than 0.1 mV dec−1, an on/off current ratio of approximately 1011, and an on-current of approximately 10−4 A at room temperature, demonstrating that the switching characteristics are superior to those of other silicon-based devices. In addition, the device parameters that affect the device performance, hysteresis characteristics, and temperature-dependent device characteristics are discussed in detail. [ABSTRACT FROM AUTHOR]
- Subjects :
- *FIELD-effect transistors
*CHARGE carriers
*SWITCHING circuits
Subjects
Details
- Language :
- English
- ISSN :
- 09574484
- Volume :
- 28
- Issue :
- 5
- Database :
- Academic Search Index
- Journal :
- Nanotechnology
- Publication Type :
- Academic Journal
- Accession number :
- 120488901
- Full Text :
- https://doi.org/10.1088/1361-6528/28/5/055205