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Characterization of deep-level defects in GaNAs/GaAs heterostructures grown by APMOVPE.
- Source :
-
Materials Science-Poland . Dec2016, Vol. 34 Issue 4, p726-734. 9p. - Publication Year :
- 2016
Details
- Language :
- English
- ISSN :
- 20831331
- Volume :
- 34
- Issue :
- 4
- Database :
- Academic Search Index
- Journal :
- Materials Science-Poland
- Publication Type :
- Academic Journal
- Accession number :
- 120610410
- Full Text :
- https://doi.org/10.1515/msp-2016-0126