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Cross-sectional transmission electron microscope observation of Si clathrate thin films grown on Si (111) substrates.
- Source :
-
Thin Solid Films . Jan2017, Vol. 621, p32-35. 4p. - Publication Year :
- 2017
-
Abstract
- By means of high-resolution transmission electron microscopy (HR-TEM) observations, and energy dispersive X-ray analyses performed with a scanning TEM (STEM-EDX), we evaluated the residual Na contents and the induced crystal strains in type-II Si clathrate films grown on a Si substrate and treated with iodine for Na elimination. Cross-sectional TEM and STEM-EDX observations verified the formation of the type-II Si clathrate thin film on the Si substrate. The guest-free (without any Na inclusion) clathrate crystal was obtained by iodine (I 2 ) treatment for more than 3 cycles. The resulting films were polycrystalline. No buffer layer was observed at the boundary of the Si clathrate crystal film and the substrate, suggesting a chemical bonding between them. The crystalline strains defined here by the deviation of the d value were within 3.5%. These findings might allow us to fabricate epitaxial Si clathrate films on Si substrates. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00406090
- Volume :
- 621
- Database :
- Academic Search Index
- Journal :
- Thin Solid Films
- Publication Type :
- Academic Journal
- Accession number :
- 120654208
- Full Text :
- https://doi.org/10.1016/j.tsf.2016.11.019