Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes.

MLA

Yiping Zhang, et al. “Investigation of P-Type Depletion Doping for InGaN/GaN-Based Light-Emitting Diodes.” Applied Physics Letters, vol. 110, no. 3, Jan. 2017, pp. 1–5. EBSCOhost, https://doi.org/10.1063/1.4973743.

APA

Yiping Zhang, Zi-Hui Zhang, Swee Tiam Tan, Hernandez-Martinez, P. L., Binbin Zhu, Shunpeng Lu, Xue Jun Kang, Xiao Wei Sun, & Demir, H. V. (2017). Investigation of p-type depletion doping for InGaN/GaN-based light-emitting diodes. Applied Physics Letters, 110(3), 1–5. https://doi.org/10.1063/1.4973743

Chicago

Yiping Zhang, Zi-Hui Zhang, Swee Tiam Tan, Pedro Ludwig Hernandez-Martinez, Binbin Zhu, Shunpeng Lu, Xue Jun Kang, Xiao Wei Sun, and Hilmi Volkan Demir. 2017. “Investigation of P-Type Depletion Doping for InGaN/GaN-Based Light-Emitting Diodes.” Applied Physics Letters 110 (3): 1–5. doi:10.1063/1.4973743.