Cite
Electrophysical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Devices.
MLA
Lazarenko, P., et al. “Electrophysical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Devices.” Russian Physics Journal, vol. 59, no. 9, Jan. 2017, pp. 1417–24. EBSCOhost, https://doi.org/10.1007/s11182-017-0925-x.
APA
Lazarenko, P., Kozyukhin, S., Sherchenkov, A., Babich, A., Timoshenkov, S., Gromov, D., Zabolotskaya, A., & Kozik, V. (2017). Electrophysical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Devices. Russian Physics Journal, 59(9), 1417–1424. https://doi.org/10.1007/s11182-017-0925-x
Chicago
Lazarenko, P., S. Kozyukhin, A. Sherchenkov, A. Babich, S. Timoshenkov, D. Gromov, A. Zabolotskaya, and V. Kozik. 2017. “Electrophysical Properties of Ge-Sb-Te Thin Films for Phase Change Memory Devices.” Russian Physics Journal 59 (9): 1417–24. doi:10.1007/s11182-017-0925-x.