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Polymorphic Layered MoTe2 from Semiconductor, Topological Insulator, to Weyl Semimetal.
- Source :
-
Chemistry of Materials . Jan2017, Vol. 29 Issue 2, p699-707. 9p. - Publication Year :
- 2017
-
Abstract
- Large size (~2 cm) single crystals of layered MoTe2 in both 2 H- and 1 T ′-types were synthsized using TeBr4 as the source of Br2 transport agent in chemical vapor transport growth. The crystal structures of the as-grown single crystals were fully characterized by X-ray diffraction, Raman spectroscopy, scanning transmission electron microscopy, scanning tunneling microscopy (STM), and electrical resistivity (ρ) measurements. The resistivity ρ( T ), magnetic susceptibility χ( T ), and heat capacity C p( T ) measurement results reveal a first order structural phase transition near ~240 K for 1 T ′-MoTe2, which has been identified to be the orthorhombic T d-phase of MoTe2 as a candidate of Weyl semimetal. The STM study revealed different local defect geometries found on the surface of 2H - and T d-types of MoTe6 units in trigonal prismatic and distorted octahedral coordination, respectively. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 08974756
- Volume :
- 29
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Chemistry of Materials
- Publication Type :
- Academic Journal
- Accession number :
- 120949927
- Full Text :
- https://doi.org/10.1021/acs.chemmater.6b04363