Cite
Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit.
MLA
Al-Ameri, Talib, et al. “Impact of Quantum Confinement on Transport and the Electrostatic Driven Performance of Silicon Nanowire Transistors at the Scaling Limit.” Solid-State Electronics, vol. 129, Mar. 2017, pp. 73–80. EBSCOhost, https://doi.org/10.1016/j.sse.2016.12.015.
APA
Al-Ameri, T., Georgiev, V. P., Sadi, T., Wang, Y., Adamu-Lema, F., Wang, X., Amoroso, S. M., Towie, E., Brown, A., & Asenov, A. (2017). Impact of quantum confinement on transport and the electrostatic driven performance of silicon nanowire transistors at the scaling limit. Solid-State Electronics, 129, 73–80. https://doi.org/10.1016/j.sse.2016.12.015
Chicago
Al-Ameri, Talib, Vihar P. Georgiev, Toufik Sadi, Yijiao Wang, Fikru Adamu-Lema, Xingsheng Wang, Salvatore M. Amoroso, Ewan Towie, Andrew Brown, and Asen Asenov. 2017. “Impact of Quantum Confinement on Transport and the Electrostatic Driven Performance of Silicon Nanowire Transistors at the Scaling Limit.” Solid-State Electronics 129 (March): 73–80. doi:10.1016/j.sse.2016.12.015.