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Carrier trapping anisotropy in ambipolar SnO thin-film transistors.
- Source :
-
Solid-State Electronics . Mar2017, Vol. 129, p88-92. 5p. - Publication Year :
- 2017
-
Abstract
- The anisotropic carrier trapping behaviors was demonstrated for ambipolar tin monoxide (SnO) thin-film transistors (TFTs). On one hand, the TFTs exhibited good stability with almost no changes in transfer characteristics under negative gate-bias stress (NGBS). On the other, under positive gate-bias stress (PGBS), the transfer curves presented parallel and positive shift with no degradation in field-effect mobility and subthreshold voltage swing. The stress-time evolution of the turn-on voltage shift, induced by different positive stress voltages and temperatures, could be described by the stretched exponential model. The relaxation time was extracted to be 1.6 × 10 4 s at room temperature with activation energy of 0.43 eV, indicating that the ambipolar SnO TFTs under PGBS approach the stability of amorphous indium-gallium-zinc oxide based TFTs. [ABSTRACT FROM AUTHOR]
- Subjects :
- *ELECTRICAL properties of tin oxides
*PERFORMANCE of transistors
*ANISOTROPY
Subjects
Details
- Language :
- English
- ISSN :
- 00381101
- Volume :
- 129
- Database :
- Academic Search Index
- Journal :
- Solid-State Electronics
- Publication Type :
- Academic Journal
- Accession number :
- 121004522
- Full Text :
- https://doi.org/10.1016/j.sse.2017.01.001