Back to Search Start Over

InGaAs metamorphic laser (1064 nm) power converters with over 40% efficiency.

Authors :
Kalyuzhnyy, N. A.
Mintairov, S. A.
Nadtochiy, A. M.
Nevedomskiy, V. N.
Rybalchenko, D. V.
Shvarts, M. Z.
Source :
Electronics Letters (Wiley-Blackwell). 2/2/2017, Vol. 53 Issue 3, p173-174. 2p. 1 Diagram, 1 Chart, 3 Graphs.
Publication Year :
2017

Abstract

Grown by metalorganic vapour phase epitaxy (MOVPE) InxGa1-xAs metamorphic laser power converters have been considered. Metamorphic buffer designs with high quality top layers have been developed. Photovoltaic converters with In0.24Ga0.76As photoactive area and optimised buffer have demonstrated efficiency 41.4% for 1064 nm monochromatic radiation conversion and ~40% for laser power conversion. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
00135194
Volume :
53
Issue :
3
Database :
Academic Search Index
Journal :
Electronics Letters (Wiley-Blackwell)
Publication Type :
Academic Journal
Accession number :
121157863
Full Text :
https://doi.org/10.1049/el.2016.4308