Cite
Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter.
MLA
Yu-Hang Zhang, et al. “Investigation on Latch-up Susceptibility Induced by High-Power Microwave in Complementary Metal–oxide–semiconductor Inverter.” Chinese Physics B, vol. 26, no. 2, Feb. 2017, p. 1. EBSCOhost, https://doi.org/10.1088/1674-1056/26/2/028501.
APA
Yu-Hang Zhang, Chang-Chun Chai, Xin-Hai Yu, Yin-Tang Yang, Yang Liu, Qing-Yang Fan, & Chun-Lei Shi. (2017). Investigation on latch-up susceptibility induced by high-power microwave in complementary metal–oxide–semiconductor inverter. Chinese Physics B, 26(2), 1. https://doi.org/10.1088/1674-1056/26/2/028501
Chicago
Yu-Hang Zhang, Chang-Chun Chai, Xin-Hai Yu, Yin-Tang Yang, Yang Liu, Qing-Yang Fan, and Chun-Lei Shi. 2017. “Investigation on Latch-up Susceptibility Induced by High-Power Microwave in Complementary Metal–oxide–semiconductor Inverter.” Chinese Physics B 26 (2): 1. doi:10.1088/1674-1056/26/2/028501.