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Al-Doped Black Phosphorus p-n Homojunction Diode for High Performance Photovoltaic.
- Source :
-
Advanced Functional Materials . 2/17/2017, Vol. 27 Issue 7, pn/a-N.PAG. 9p. - Publication Year :
- 2017
-
Abstract
- 2D layered materials based p-n junctions are fundamental building block for enabling new functional device applications with high efficiency. However, due to the lack of controllable doping technique, state-of-the-art 2D p-n junctions are predominantly made of van der Waals heterostructures or electrostatic gated junctions. Here, the authors report the demonstration of a spatially controlled aluminum doping technique that enables a p-n homojunction diode to be realized within a single 2D black phosphorus nanosheet for high performance photovoltaic application. The diode achieves a near-unity ideality factor of 1.001 along with an on/off ratio of ≈5.6 × 103 at a low bias of 2 V, allowing for low-power dynamic current rectification without signal decay or overshoot. When operated under a photovoltaic regime, the diode's dark current can be significantly suppressed. The presence of a built-in electric field additionally gives rise to temporal short-circuit current and open-circuit voltage under zero external bias, indicative of its enriched functionalities for self-powered photovoltaic and high signal-to-noise photodetection applications. [ABSTRACT FROM AUTHOR]
- Subjects :
- *PHOSPHORUS
*DIODES
*ALUMINUM
*DOPING agents (Chemistry)
*PHOTOVOLTAIC effect
Subjects
Details
- Language :
- English
- ISSN :
- 1616301X
- Volume :
- 27
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- Advanced Functional Materials
- Publication Type :
- Academic Journal
- Accession number :
- 121269539
- Full Text :
- https://doi.org/10.1002/adfm.201604638