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Strain Gated Bilayer Molybdenum Disulfide Field Effect Transistor with Edge Contacts.
- Source :
-
Scientific Reports . 2/10/2017, p41593. 1p. - Publication Year :
- 2017
-
Abstract
- Silicon nitride stress capping layer is an industry proven technique for increasing electron mobility and drive currents in n-channel silicon MOSFETs. Herein, the strain induced by silicon nitride is firstly characterized through the changes in photoluminescence and Raman spectra of a bare bilayer MoS2 (Molybdenum disulfide). To make an analogy of the strain-gated silicon MOSFET, strain is exerted to a bilayer MoS2 field effect transistor (FET) through deposition of a silicon nitride stress liner that warps both the gate and the source-drain area. Helium plasma etched MoS2 layers for edge contacts. Current on/off ratio and other performance metrics are measured and compared as the FETs evolve from back-gated, to top-gated and finally, to strain-gated configurations. While the indirect band gap of bilayer MoS2 at 0% strain is 1.25 eV, the band gap decreases as the tensile strain increases on an average of ~100 meV per 1% tensile strain, and the decrease in band gap is mainly due to lowering the conduction band at K point. Comparing top- and strain-gated structures, we find a 58% increase in electron mobility and 46% increase in on-current magnitude, signalling a benign effect of tensile strain on the carrier transport properties of MoS2. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 20452322
- Database :
- Academic Search Index
- Journal :
- Scientific Reports
- Publication Type :
- Academic Journal
- Accession number :
- 121298806
- Full Text :
- https://doi.org/10.1038/srep41593