Integral isoconversional method for evaluating crystallization parameters of thin films of GeSbTe phase change memory materials.

We propose a method for evaluating kinetic parameters for the crystallization of thin films of phase change materials. Its basic principle is to jointly use model-free and model isoconversional methods in analyzing differential scanning calorimetry results. Using this method, we have identified the reaction model and evaluated the activation energy for crystallization and pre-exponential factor as a function of the degree of conversion for GeSbTe-based thin films. [ABSTRACT FROM AUTHOR]