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Electrical characteristics of a bendable a-Si:H thin film transistor with overlapped gate and source/drain regions.
- Source :
-
Applied Physics Letters . 2/27/2017, Vol. 110 Issue 9, p1-4. 4p. 1 Chart, 4 Graphs. - Publication Year :
- 2017
-
Abstract
- In this study, we investigate the influence of an overlap between the gate and source/drain regions of a-Si:H thin film transistors (TFTs) on their electrical characteristics under tensile or compressive strain through experiment and mechanical simulation. The strain distribution in the a-Si:H TFT for a bending radius of 2mm reveals that the strain at both ends of the TFT is ten times larger than that at the source-drain current path. The overlap lowers the stress sustained by the TFT in the region comprised between the channel and the gate insulator; therefore, TFTs with the overlap operate even at a tensile strain of 2.54%. In particular, the overlap is remarkably effective on relaxing the stress sustained in the interface between the gate insulator and the gate electrode, consequently improving the electrical stability of the bent TFT. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00036951
- Volume :
- 110
- Issue :
- 9
- Database :
- Academic Search Index
- Journal :
- Applied Physics Letters
- Publication Type :
- Academic Journal
- Accession number :
- 121512499
- Full Text :
- https://doi.org/10.1063/1.4977564