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Operating Principles, Design Considerations, and Experimental Characteristics of High-Voltage 4H-SiC Bidirectional IGBTs.
- Source :
-
IEEE Transactions on Electron Devices . Mar2017, Vol. 64 Issue 3, p888-896. 9p. - Publication Year :
- 2017
-
Abstract
- Bidirectional power transistors are essential components of several power electronics systems, such as matrix converters. In this paper, we present the operating principles, design considerations, and experimental characteristics of a novel planar gate 4H-SiC bidirectional insulated gate bipolar transistors. The impact of various drift layer and unit cell parameters on blocking, on-state, and switching performance has been evaluated by using numerical simulations, and critical performance tradeoffs have been discussed. Based on the optimized design, devices were fabricated on lightly doped free-standing n-type 4H-SiC wafers. Fabricated devices showed good conductivity modulation, with a forward voltage drop of 9.7 V at 50 A/cm2 at room temperature, which increased to 11.5 V at 150 °C. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00189383
- Volume :
- 64
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- IEEE Transactions on Electron Devices
- Publication Type :
- Academic Journal
- Accession number :
- 121551443
- Full Text :
- https://doi.org/10.1109/TED.2016.2631241