An Analytical Model for Double-Gate Tunnel FETs Considering the Junctions Depletion Regions and the Channel Mobile Charge Carriers.

In this paper, we present an accurate analytical potential model for the double-gate tunnel FETs (DG-TFETs) by solving Poisson’s equation with appropriate boundary conditions. Taking the mobile charge carriers in the channel and the depletion regions inside the source and drain into account, the model predicts the electrostatic potential of the homojunction device in all regions of the device operation more accurately, compared with the predictions of the previously reported models. The potential model is utilized for developing some models for important quantities in TFETs, such as lateral electric field, minimum tunneling length, and drain current. Owing to the physical and analytical nature of the developed models, one can pursue the influence of the transistor parameters on the electrical characteristics of DG-TFETs. To assess the accuracy of the proposed models, the results of the models are compared to those of the numerical simulations and found to be accurately predicting the simulation results for different device parameters. [ABSTRACT FROM AUTHOR]