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Fully solution-processed metal oxide thin-film transistors via a low-temperature aqueous route.

Authors :
Xu, Wangying
Long, Mingzhu
Zhang, Tiankai
Liang, Lingyan
Cao, Hongtao
Zhu, Deliang
Xu, Jian-Bin
Source :
Ceramics International. Jun2017, Vol. 43 Issue 8, p6130-6137. 8p.
Publication Year :
2017

Abstract

We report a facile and low-temperature aqueous route for the fabrication of various oxide thin films (Al 2 O 3 , In 2 O 3 and InZnO). A detail study is carried out to reveal the formation and properties of these sol-gel-derived thin films. The results show that the water-based oxide thin films undergo the decomposition of nitrate group as well as conversion of metal hydroxides to form metal oxide framework. High quality oxide thin film could be achieved at low temperature by this aqueous route. Furthermore, these oxide thin films are integrated to form thin-film transistors (TFTs) and the electrical performance is systematically studied. In particular, we successfully demonstrate In 2 O 3 /Al 2 O 3 TFTs with high mobility of 30.88 cm 2 V −1 s −1 and low operation voltage of 4 V at a maximum processing temperature of 250 °C. [ABSTRACT FROM AUTHOR]

Details

Language :
English
ISSN :
02728842
Volume :
43
Issue :
8
Database :
Academic Search Index
Journal :
Ceramics International
Publication Type :
Academic Journal
Accession number :
121673751
Full Text :
https://doi.org/10.1016/j.ceramint.2017.02.007