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Plasma-etched, S-doped graphene for effective hydrogen evolution reaction.
- Source :
-
International Journal of Hydrogen Energy . Feb2017, Vol. 42 Issue 7, p4184-4192. 9p. - Publication Year :
- 2017
-
Abstract
- Heteroatom-doped graphene as highly efficient metal-free electrocatalyst is emerging as the most promising alternative to Pt-based electrocatalysts for hydrogen evolution reaction (HER). However, developing heteroatom-doped graphene with competitive HER activity remains a great challenge. Here, we reported an effective strategy to employ plasma-etching method to create more topological defects on S-doped graphene, and obtained plasma-etched, S-doped graphene exhibited a significantly enhanced HER activity with an overpotential of 178 mV at a current density of 10 mA cm −2 . It was proved that the synergetic coupling between S-doping and plasma-induced topological defects contributed to the excellent HER performance. We further showed that the combination of high S-doping level with thiophene-S-rich species and appropriate amount of topological defects could maximize the HER activity. The successful combination of plasma-assisted defect engineering and heteroatom-doping in this work may open up a new pathway for developing highly efficient graphene-based metal-free catalysts toward HER. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 03603199
- Volume :
- 42
- Issue :
- 7
- Database :
- Academic Search Index
- Journal :
- International Journal of Hydrogen Energy
- Publication Type :
- Academic Journal
- Accession number :
- 121755445
- Full Text :
- https://doi.org/10.1016/j.ijhydene.2016.09.142