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Design of power integrated circuits in full AlGaN/GaN MIS-HEMT configuration for power conversion.
- Source :
-
Physica Status Solidi. A: Applications & Materials Science . Mar2017, Vol. 214 Issue 3, pn/a-N.PAG. 9p. - Publication Year :
- 2017
-
Abstract
- In order to examine the feasibility of full wide-bandgap GaN-based converters in aerospace power conversion applications, this paper proposes a monolithic DC-DC buck converter design with integrated high-side gate driver, over-current protection, and pulse-width-modulation feedback control circuits based on full AlGaN/GaN MIS-HEMT configuration. After model calibration of the DC and transient behaviors with fabricated normally-ON and normally-OFF AlGaN/GaN MIS-HEMT devices, the DC-DC buck converter is simulated. The circuit converts the input 100 V down to an adjustable range at 1 MHz switching frequency. The over-current protection function can properly protect the converter at a preset over-current threshold. The converter can respond to the load current and line input voltage fluctuations due to the integrated feedback control. These results illustrate the performance of proposed all-GaN DC-DC power converter design. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 18626300
- Volume :
- 214
- Issue :
- 3
- Database :
- Academic Search Index
- Journal :
- Physica Status Solidi. A: Applications & Materials Science
- Publication Type :
- Academic Journal
- Accession number :
- 121775901
- Full Text :
- https://doi.org/10.1002/pssa.201600562