Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes.

Light-emitting diodes based on p -SnO 2 / i -MgZnO/ n -ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p -SnO 2 / i -MgZnO/ n -ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases. [ABSTRACT FROM AUTHOR]