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Bidirectional electroluminescence from p-SnO2/i-MgZnO/n-ZnO heterojunction light-emitting diodes.
- Source :
-
Journal of Luminescence . Jun2017, Vol. 186, p223-228. 6p. - Publication Year :
- 2017
-
Abstract
- Light-emitting diodes based on p -SnO 2 / i -MgZnO/ n -ZnO heterojunction have been fabricated. The material properties and the performance of heterojunction device are characterized. Current-voltage characteristics of the device show a diode-like rectifying behavior. Under forward bias, two prominent emission peaks located at 589 nm and 722 nm in the visible region and a weak ultraviolet emission are observed from p -SnO 2 / i -MgZnO/ n -ZnO heterojunction device. As the device is under reverse bias, a broad visible emission band dominates the electroluminescence spectrum at a high current. Furthermore, the emission mechanism has been discussed in terms of energy band structures of the device under forward and reverse biases. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00222313
- Volume :
- 186
- Database :
- Academic Search Index
- Journal :
- Journal of Luminescence
- Publication Type :
- Academic Journal
- Accession number :
- 122037469
- Full Text :
- https://doi.org/10.1016/j.jlumin.2017.02.043