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A comparison of the effects of cobalt-60 γ ray irradiation on DPSA bipolar transistors at high and low injection levels.
- Source :
-
Microelectronics Reliability . Apr2017, Vol. 71, p86-90. 5p. - Publication Year :
- 2017
-
Abstract
- We investigate the γ-ray total dose induced degradation of double polysilicon self-aligned (DPSA) bipolar NPN transistors at low dose rate. Through comparing the measured results in low- and high-level injection regions, we find that the main irradiation damages related defects in two regions are quite different. In the case of lower emitter-base (E-B) bias, the damage is mainly localized in E-B interface region. For high-level injection, excess base current mainly results from radiation induced defects in intrinsic base region. Furthermore, a phenomenological model based on qualitatively analytical calculation is adopted to explain the experimental results. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00262714
- Volume :
- 71
- Database :
- Academic Search Index
- Journal :
- Microelectronics Reliability
- Publication Type :
- Academic Journal
- Accession number :
- 122243032
- Full Text :
- https://doi.org/10.1016/j.microrel.2017.02.015