Back to Search
Start Over
Monolayer W xMo1− xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors.
- Source :
-
Advanced Functional Materials . 4/5/2017, Vol. 27 Issue 13, pn/a-N.PAG. 7p. - Publication Year :
- 2017
-
Abstract
- Monolayer W xMo1− xS2-based field effect transistors are demonstrated for the first time on the monolayer W xMo1− xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as-grown monolayer W xMo1− xS2. Electronic band structure of monolayer W xMo1− xS2 has been calculated using first-principle theory. The thermal stability of monolayer W xMo1− xS2 has been evaluated using Raman-temperature measurement. Carrier transport study on the fabricated W xMo1− xS2 FETs has been analyzed using temperature-dependent current measurement, and a field effect mobility of ≈30 cm2 V−1 s−1 at 300 K is obtained. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 1616301X
- Volume :
- 27
- Issue :
- 13
- Database :
- Academic Search Index
- Journal :
- Advanced Functional Materials
- Publication Type :
- Academic Journal
- Accession number :
- 122274908
- Full Text :
- https://doi.org/10.1002/adfm.201606469