Monolayer W xMo1− xS2 Grown by Atmospheric Pressure Chemical Vapor Deposition: Bandgap Engineering and Field Effect Transistors.

Monolayer W xMo1− xS2-based field effect transistors are demonstrated for the first time on the monolayer W xMo1− xS2 flake, which is grown by the chemical vapor deposition method under an atmospheric pressure. Detailed material studies using Raman and photoluminescence measurements have been carried out on the as-grown monolayer W xMo1− xS2. Electronic band structure of monolayer W xMo1− xS2 has been calculated using first-principle theory. The thermal stability of monolayer W xMo1− xS2 has been evaluated using Raman-temperature measurement. Carrier transport study on the fabricated W xMo1− xS2 FETs has been analyzed using temperature-dependent current measurement, and a field effect mobility of ≈30 cm2 V−1 s−1 at 300 K is obtained. [ABSTRACT FROM AUTHOR]