Cite
An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration.
MLA
Xie, Ruiliang, et al. “An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration.” IEEE Transactions on Power Electronics, vol. 32, no. 8, Aug. 2017, pp. 6416–33. EBSCOhost, https://doi.org/10.1109/TPEL.2016.2618349.
APA
Xie, R., Wang, H., Tang, G., Yang, X., & Chen, K. J. (2017). An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration. IEEE Transactions on Power Electronics, 32(8), 6416–6433. https://doi.org/10.1109/TPEL.2016.2618349
Chicago
Xie, Ruiliang, Hanxing Wang, Gaofei Tang, Xu Yang, and Kevin J. Chen. 2017. “An Analytical Model for False Turn-On Evaluation of High-Voltage Enhancement-Mode GaN Transistor in Bridge-Leg Configuration.” IEEE Transactions on Power Electronics 32 (8): 6416–33. doi:10.1109/TPEL.2016.2618349.