Analytical and Experimental Investigation on A Dynamic Thermo-Sensitive Electrical Parameter With Maximum dIC/dt During Turn-off for High Power Trench Gate/Field-Stop IGBT Modules.

In this paper, a dynamic thermo-sensitive electrical parameter (DTSEP) for extracting the junction temperature of the trench gate/field-stop insulated gate bipolar transistor (IGBT) modules by using the maximum collector current falling rate is proposed. First, a theoretical model of the transient collector current during turn-<sc>off</sc> process is developed in terms of the behavior characteristics of the inside storage carriers. Then, the inherent linear relationship between the maximum collector current falling rate dIC/dt and junction temperature Tj is demonstrated and investigated. Fortunately, benefitting from the presence of the intrinsic parasitic inductance LeE between the Kelvin and power emitters of IGBT modules, the maximum dIC/dt can be easily measured to validate the theoretical analysis. Consequently, the maximum dIC/dt during turn-<sc>off</sc> process is a promising DTSEP for IGBT module junction temperature estimation. Moreover, the physical device parameters that affect the temperature sensitivity of the maximum dIC/dt are also discussed with the derived transient collector current falling model. [ABSTRACT FROM AUTHOR]