Cite
The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC.
MLA
Peng, B., et al. “The Effect of Ions on the Magnetic Moment of Vacancy for Ion-Implanted 4H-SiC.” Journal of Applied Physics, vol. 121, no. 13, Apr. 2017, pp. 1–8. EBSCOhost, https://doi.org/10.1063/1.4979863.
APA
Peng, B., Zhang, Y. M., Dong, L. P., Wang, Y. T., & Jia, R. X. (2017). The effect of ions on the magnetic moment of vacancy for ion-implanted 4H-SiC. Journal of Applied Physics, 121(13), 1–8. https://doi.org/10.1063/1.4979863
Chicago
Peng, B., Y. M. Zhang, L. P. Dong, Y. T. Wang, and R. X. Jia. 2017. “The Effect of Ions on the Magnetic Moment of Vacancy for Ion-Implanted 4H-SiC.” Journal of Applied Physics 121 (13): 1–8. doi:10.1063/1.4979863.