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Highly efficient epitaxial Ge solar cells grown on GaAs (001) substrates by MOCVD using isobutylgermane.
- Source :
-
Solar Energy Materials & Solar Cells . Jul2017, Vol. 166, p127-131. 5p. - Publication Year :
- 2017
-
Abstract
- Single-junction Ge solar cells have been epitaxially grown on GaAs (001) substrates by a low pressure metalorganic chemical vapor deposition using isobutylgermane. Various growth conditions have been studied to reduce the high doping level of over 1×10 19 cm −3 of the p-type Ge epitaxial layer, which is detrimental to the minority carrier collection efficiency. By increasing the growth rate and employing a discontinuous doping technique, the p-type doping level of the epitaxial Ge layer has been lowered to 2×10 18 cm −3 , and the hole mobility increased from 44 to 162 cm 2 /V s. A high power conversion efficiency of 6.72% can be achieved under AM1.5 G illumination by the epitaxial Ge solar cell with the lowered doping level in the p-type Ge base region. The spectral response of the epitaxial Ge solar cell with a 5 µm thick base layer is good enough to use for InGaP/GaAs/Ge triple-junction solar cells. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09270248
- Volume :
- 166
- Database :
- Academic Search Index
- Journal :
- Solar Energy Materials & Solar Cells
- Publication Type :
- Academic Journal
- Accession number :
- 122478432
- Full Text :
- https://doi.org/10.1016/j.solmat.2017.03.015