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Rational synthesis of bandgap-tunable MS2(1−x)Se2x (M = Mo, W) alloys and their physical properties.
- Source :
-
Journal of Alloys & Compounds . Jul2017, Vol. 710, p628-634. 7p. - Publication Year :
- 2017
-
Abstract
- Band gap engineering has been opening a way to enhance the performance of two-dimensional (2D) material devices. Here we report a synthesis of ternary MS 2(1−x) Se 2x (M = Mo, W) alloys with a band gap tunability of ∼170 meV using a solid state reaction method. X-ray photoelectron spectroscopy and Raman scattering characterizations reveal that the change of Se contents can be utilized to tune the composition of the ternary MS 2(1−x) Se 2x (M = Mo, W) alloys. UV–vis–NIR absorption results conform the realization of tunable band gap in MS 2(1−x) Se 2x (M = Mo, W) alloys tailored by different Se contents. The electrical transport investigation of the ternary alloys exhibits an n-type semiconductor behavior demonstrated by back-gated field effect transistors. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 09258388
- Volume :
- 710
- Database :
- Academic Search Index
- Journal :
- Journal of Alloys & Compounds
- Publication Type :
- Academic Journal
- Accession number :
- 122645915
- Full Text :
- https://doi.org/10.1016/j.jallcom.2017.03.328