Leaching behaviors of impurities in metallurgical-grade silicon with hafnium addition.

Hf was employed as an impurity getter to enhance the removal of impurities from metallurgical-grade Si (MG-Si) via the solidification of Si or a Si-33 wt% Al solvent. The leaching behaviors of the impurities (B, Fe, Al, Ca, P, Zr, Ti, V, Mn, Hf, and Ni) within MG-Si, in the presence of 5 wt% Hf, were investigated using various leaching approaches. Compared with aqua regia and HF, HCl + HF was determined to be the optimal lixiviant for the elimination of impurities from Hf-containing MG-Si. The use of a combination of HCl + HF and aqua regia reduced the quantity of impurities from 6126 ppmw to 94 ppmw. Eh-pH diagrams were calculated to discuss the leaching of HfSi 2 in aqua regia and HF solutions. The presence of Hf in the MG-Si enhanced the removal of impurities, especially P, which cannot be efficiently removed via solidification refining and hydrometallurgical treatments. Hf-containing Si-Al solvent refining is considered the most efficient approach for the elimination of impurities (except Al). The removal fractions of B and P were 94.2% and 86.2%, respectively, achieved via the solidification of the Si-33 wt% Al solvent. Moreover, 99.94% and 99.9996% of the Hf, used as an impurity getter, could be eliminated through the solidification of the Si and Si-33wt% Al solvent, respectively, decreasing from 50,000 ppmw, to 28 ppmw and 0.2 ppmw, respectively. [ABSTRACT FROM AUTHOR]