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Pore nucleation and growth in n-type Si during its electrochemical etching.
- Source :
-
Doklady Chemistry . Apr2017, Vol. 473 Issue 2, p67-69. 3p. - Publication Year :
- 2017
-
Abstract
- A mechanism is suggested for pore formation in n-type Si through the stage of nucleation in the most probable places. [ABSTRACT FROM AUTHOR]
- Subjects :
- *DISCONTINUOUS precipitation
*SILICON
*ETCHING
*ELECTROCHEMISTRY
*PHASE transitions
Subjects
Details
- Language :
- English
- ISSN :
- 00125008
- Volume :
- 473
- Issue :
- 2
- Database :
- Academic Search Index
- Journal :
- Doklady Chemistry
- Publication Type :
- Academic Journal
- Accession number :
- 123084100
- Full Text :
- https://doi.org/10.1134/S0012500817040012