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Surface supersaturation in flow-rate modulation epitaxy of GaN.
- Source :
-
Journal of Crystal Growth . Jun2017, Vol. 468, p821-826. 6p. - Publication Year :
- 2017
-
Abstract
- Hillocks on N-face GaN (000 1 ¯ ) films are effectively eliminated by group-III-source flow-rate modulation epitaxy (FME), wherein the flow-rate of group-III sources are sequentially modulated under a constant supply of NH 3 . A hillock-free smooth surface obtained by group-III-source FME is attributed to the enhancement of step-flow growth. We found that a hillock originates from a micropipe and grows by spiral growth around the micropipe. The spiral growth rate rapidly decreases with decreasing the degree of surface supersaturation σ , while the step-flow growth rate decreases linearly. For group-III-source FME, wherein σ is lower than conventional continuous growth, the spiral growth rate could be lower than the step-flow growth one so that the formation of hillocks is suppressed. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 468
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 123308511
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2016.11.107