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A-plane GaN growth on (11-20) 4H-SiC substrate with an ultrathin interlayer.
- Source :
-
Journal of Crystal Growth . Jun2017, Vol. 468, p866-869. 4p. - Publication Year :
- 2017
-
Abstract
- A-plane GaN was attempted to be grown on (11-20) 4H-SiC bulk substrate without using a traditional thick buffer layer. By inducing TMAl treatment before the GaN growth step and using both a low pressure and V/III ratio, the interlayer thickness of the a-plane GaN/SiC was reduced to 1.7 + 0.5 nm. The ultrathin interlayer was observed to be either AlN or AlGaN with a low Ga composition. This study is aimed to contribute to the understanding of GaN growth on the sidewalls of c-plane trench structure SiC. The ultrathin growth technique is also hoped to be applied to the fabrication of GaN-based vertical structure nonpolar optical or electrical devices. [ABSTRACT FROM AUTHOR]
Details
- Language :
- English
- ISSN :
- 00220248
- Volume :
- 468
- Database :
- Academic Search Index
- Journal :
- Journal of Crystal Growth
- Publication Type :
- Academic Journal
- Accession number :
- 123308556
- Full Text :
- https://doi.org/10.1016/j.jcrysgro.2017.01.031